Construction time: June 1, 2013 - December 31, 2013
Building area: 36.4 (10,000㎡)
Clean area: 15.5 (10,000㎡)
Cleanliness level: Class 1,000
Scope of contracting: FAB building air duct installation (East, North), and the installation and commissioning of aluminized zinc air ducts, Teflon air ducts, and FM-PVC air ducts.
Project highlights: for the 12-inch flash memory project, FAB is the main building contacted by the Xi'an Samsung Project Department. The FAB building spans 406m from north to south and 192m from east to west, with four floors in total. The third floor is the wafer process production area and was the plant with the largest single scale then. The Xi'an Samsung Semiconductor Project is a national-level project, and the FAB building ventilation engineering participated in by the company is an important system of the main plant. Through the efforts of the company, it won the "National Quality Engineering Award".
Project HD renderings (aerial view)
Project HD renderings (aerial view)
Project awards
2016-2017 National Quality Engineering Award